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| NSI45090DDT4G Adjustable Constant Current Regulator & LED Driver 45 V, 90 - 160 mA + 15%, 2.7 W Package The adjustable constant current regulator (CCR) is a simple, economical and robust device designed to provide a cost effective solution for regulating current in LEDs. The CCR is based on patent- pending Self- Biased Transistor (SBT) technology and regulates current over a wide voltage range. It is designed with a negative temperature coefficient to protect LEDs from thermal runaway at extreme voltages and currents. The CCR turns on immediately and is at 20% of regulation with only 0.5 V Vak. The Radj pin allows Ireg(SS) to be adjusted to higher currents by attaching a resistor between Radj (Pin 3) and the Cathode (Pin 4). The Radj pin can also be left open (No Connect) if no adjustment is required. It requires no external components allowing it to be designed as a high or low-side regulator. The high anodecathode voltage rating withstands surges common in Automotive, Industrial and Commercial Signage applications. This device is available in a thermally robust package, which is lead-free RoHS compliant and uses halogen- free molding compound. For the AEC-Q101 part please see the NSI45090JD datasheet. Features http://onsemi.com Ireg(SS) = 90 - 160 mA @ Vak = 7.5 V Anode 1 3 Radj 4 Cathode 4 12 * * * * * * * * * Robust Power Package: 2.7 Watts Adjustable up to 160 mA Wide Operating Voltage Range Immediate Turn-On Voltage Surge Suppressing - Protecting LEDs SBT (Self-Biased Transistor) Technology Negative Temperature Coefficient Eliminates Additional Regulation These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 3 DPAK CASE 369C MARKING DIAGRAM A Radj Y WW NSI90D G 1 YWW NSI 90DG C Applications * Automobile: Chevron Side Mirror Markers, Cluster, Display & * AC Lighting Panels, Display Signage, Decorative Lighting, Channel * * * Lettering Switch Contact Wetting Application Note AND8391/D - Power Dissipation Considerations Application Note AND8349/D - Automotive CHMSL Instrument Backlighting, CHMSL, Map Light = Year = Work Week = Specific Device Code = Pb-Free Package ORDERING INFORMATION Device NSI45090DDT4G Package DPAK (Pb-Free) Shipping 2500/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2010 February, 2010 - Rev. 0 1 Publication Order Number: NSI45090DD/D NSI45090DDT4G MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating Anode-Cathode Voltage Reverse Voltage Operating and Storage Junction Temperature Range ESD Rating: Human Body Model Machine Model Symbol Vak Max VR TJ, Tstg ESD Value 45 500 -55 to +150 Class 3A Class B Unit V mV C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Steady State Current @ Vak = 7.5 V (Note 1) Voltage Overhead (Note 2) Pulse Current @ Vak = 7.5 V (Note 3) Capacitance @ Vak = 7.5 V (Note 4) Capacitance @ Vak = 0 V (Note 4) 1. 2. 3. 4. Symbol Ireg(SS) Voverhead Ireg(P) C C 86.2 Min 76.5 Typ 90 1.8 103 17 70 119.6 Max 103.5 Unit mA V mA pF pF Ireg(SS) steady state is the voltage (Vak) applied for a time duration 80 sec, using FR-4 @ 300 mm2 2 oz. Copper traces, in still air. Voverhead = Vin - VLEDs. Voverhead is typical value for 65% Ireg(SS). Ireg(P) non-repetitive pulse test. Pulse width t 300 msec. f = 1 MHz, 0.02 V RMS. Characteristic Total Device Dissipation (Note 5) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 5) Thermal Reference, Junction-to-Lead 4 (Note 5) Total Device Dissipation (Note 6) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 6) Thermal Reference, Junction-to-Lead 4 (Note 6) Total Device Dissipation (Note 7) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 7) Thermal Reference, Junction-to-Lead 4 (Note 7) Total Device Dissipation (Note 8) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 8) Thermal Reference, Junction-to-Lead 4 (Note 8) Total Device Dissipation (Note 9) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 9) Thermal Reference, Junction-to-Lead 4 (Note 9) Total Device Dissipation (Note 10) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 10) Thermal Reference, Junction-to-Lead 4 (Note 10) Junction and Storage Temperature Range Symbol PD RJA RJL4 PD RJA RJL4 PD RJA RJL4 PD RJA RJL4 PD RJA RJL4 PD RJA RJL4 TJ, Tstg Max 1771 14.16 70.6 6.8 2083 16.67 60 6.3 2080 16.64 60.1 6.5 2441 19.53 51.2 5.9 2309 18.47 54.1 6.2 2713 21.71 46.1 5.7 -55 to +150 Unit mW mW/C C/W C/W mW mW/C C/W C/W mW mW/C C/W C/W mW mW/C C/W C/W mW mW/C C/W C/W mW mW/C C/W C/W C THERMAL CHARACTERISTICS NOTE: Lead measurements are made by non-contact methods such as IR with treated surface to increase emissivity to 0.9. Lead temperature measurement by attaching a T/C may yield values as high as 30% higher C/W values based upon empirical measurements and method of attachment. 5. FR-4 @ 300 mm2, 1 oz. copper traces, still air. 6. FR-4 @ 300 mm2, 2 oz. copper traces, still air. 7. FR-4 @ 500 mm2, 1 oz. copper traces, still air. 8. FR-4 @ 500 mm2, 2 oz. copper traces, still air. 9. FR-4 @ 700 mm2, 1 oz. copper traces, still air. 10. FR-4 @ 700 mm2, 2 oz. copper traces, still air. http://onsemi.com 2 NSI45090DDT4G Minimum FR-4 @ 300 mm2, 2 oz Copper Trace, Still Air 110 100 90 80 70 60 50 40 30 20 10 0 -10 -20 -10 Ireg(SS), STEADY STATE CURRENT (mA) 110 100 90 80 70 60 50 40 30 20 10 0 0 1 2 DC Test Steady State, Still Air, Radj = Open 3 4 5 6 7 8 9 10 Vak, ANODE-CATHODE VOLTAGE (V) TA = 125C TA = -40C TA = 25C TA = 85C [ -0.144 mA/C typ @ Vak = 7.5 V [ -0.155 mA/C typ @ Vak = 7.5 V [ -0.223 mA/C typ @ Vak = 7.5 V TYPICAL PERFORMANCE CURVES Ireg, CURRENT REGULATION (mA) TA = 25C, Radj = Open 0 10 20 30 40 50 60 70 Vak, ANODE-CATHODE VOLTAGE (V) Figure 1. General Performance Curve for CCR Ireg(SS), STEADY STATE CURRENT (mA) 110 Ireg(P), PULSE CURRENT (mA) 105 TA = 25C 100 95 90 Non-Repetitive Pulse Test 85 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 105 100 95 90 85 80 75 85 Figure 2. Steady State Current (Ireg(SS)) vs. Anode-Cathode Voltage (Vak) Vak @ 7.5 V TA = 25C 90 95 100 105 110 115 120 Vak, ANODE-CATHODE VOLTAGE (V) Ireg(P), PULSE CURRENT (mA) Figure 3. Pulse Current (Ireg(P)) vs. Anode-Cathode Voltage (Vak) Ireg(SS), STEADY STATE CURRENT (mA) 104 103 102 101 100 99 98 97 96 95 94 93 92 91 90 89 160 150 140 130 120 110 Figure 4. Steady State Current vs. Pulse Current Testing Ireg, CURRENT REGULATION (mA) Vak @ 7.5 V TA = 25C Radj = Open 100 90 80 1 10 Radj (W) 100 1000 0 10 20 30 40 50 60 70 80 90 TIME (s) Figure 5. Current Regulation vs. Time Figure 6. Ireg(SS) vs. Radj http://onsemi.com 3 NSI45090DDT4G 4200 700 mm2/2 oz 3900 3600 500 mm2/2 oz 3300 3000 2700 300 mm2/2 oz 2400 2100 1800 700 mm2/1 oz 1500 1200 500 mm2/1 oz 900 600 300 mm2/1 oz 300 40 100 -40 -20 0 20 60 80 TA, AMBIENT TEMPERATURE (C) POWER DISSIPATION (mW) 120 Figure 7. Power Dissipation vs. Ambient Temperature @ TJ = 1505C APPLICATIONS D1 Anode Cathode + - LED Q1 Q2 Qx D1 Anode Q1 Q2 Qx Radj LED HF3-R5570 Radj LED HF3-R5570 Radj + - HF3-R5570 Cathode Vin LED Radj Radj Radj Vin HF3-R5570 LED HF3-R5570 LED HF3-R5570 LED HF3-R5570 LED HF3-R5570 LED HF3-R5570 LED HF3-R5570 LED HF3-R5570 LED HF3-R5570 Figure 8. Typical Application Circuit (30 mA each LED String) Number of LED's that can be connected is determined by: D1 is a reverse battery protection diode LED's = ((Vin - QX VF - D1 VF)/LED VF) Example: Vin = 12 Vdc, QX VF = 3.5 Vdc, D1VF = 0.7 V LED VF = 2.2 Vdc @ 30 mA (12 Vdc - 4.2 Vdc)/2.2 Vdc = 3 LEDs in series. Figure 9. Typical Application Circuit (90 mA each LED String) Number of LED's that can be connected is determined by: D1 is a reverse battery protection diode Example: Vin = 12 Vdc, QX VF = 3.5 Vdc, D1VF = 0.7 V LED VF = 2.6 Vdc @ 90 mA (12 Vdc - (3.5 + 0.7 Vdc))/2.6 Vdc = 3 LEDs in series. Number of Drivers = LED current/30 mA 90 mA/30 mA = 3 Drivers (Q1, Q2, Q3) http://onsemi.com 4 NSI45090DDT4G Comparison of LED Circuit using CCR vs. Resistor Biasing ON Semiconductor CCR Design Constant brightness over full Supply Voltage (more efficient), see Figure 10 Little variation of power in LEDs, see Figure 11 Constant current extends LED strings lifetime, see Figure 10 Current decreases as voltage increases, see Figure 10 Current supplied to LED string decreases as temperature increases (self-limiting), see Figure 2 Single resistor is used for current select Fewer components, less board space required Surface mount component Resistor Biased Design Large variations in brightness over full Automotive Supply Voltage Large variations of current (power) in LEDs High Supply Voltage/ Higher Current in LED strings limits lifetime Current increases as voltage increases LED current decreases as temperature increases Requires costly inventory (need for several resistor values to match LED intensity) More components, more board space required Through-hole components 140 120 TA = 25C 800 700 600 Pd LEDs (mW) 500 400 300 200 100 16 0 9 TA = 25C LED Power with CCR Device LED Power with 83.3 W Representative Test Data for Figure 8 Circuit, Pd of LEDs, FR-4 @ 300 mm2, 2 oz Copper Area 10 11 12 13 14 15 16 Circuit Current with 100 CCR Device I (mA) 80 60 40 20 0 9 Circuit Current with 83.3 W 10 11 12 Representative Test Data for Figure 8 Circuit, Current of LEDs, FR-4 @ 300 mm2, 2 oz Copper Area 13 14 15 Vin (V) Vin (V) Figure 10. Series Circuit Current Current Regulation: Pulse Mode (Ireg(P)) vs DC Steady-State (Ireg(SS)) Figure 11. LED Power There are two methods to measure current regulation: Pulse mode (Ireg(P)) testing is applicable for factory and incoming inspection of a CCR where test times are a minimum. (t < 300 ms). DC Steady-State (Ireg(SS)) testing is applicable for application verification where the CCR will be operational for seconds, minutes, or even hours. ON Semiconductor has correlated the difference in Ireg(P) to Ireg(SS) for stated board material, size, copper area and copper thickness. Ireg(P) will always be greater than Ireg(SS) due to the die temperature rising during Ireg(SS). This heating effect can be minimized during circuit design with the correct selection of board material, metal trace size and weight, for the operating current, voltage, board operating temperature (TA) and package. (Refer to Thermal Characteristics table). http://onsemi.com 5 NSI45090DDT4G PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C-01 ISSUE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- -T- B V R 4 SEATING PLANE C E S A 1 2 3 Z U K F L D 2 PL G 0.13 (0.005) M J H T DIM A B C D E F G H J K L R S U V Z RECOMMENDED FOOTPRINT 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm inches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 6 NSI45090DD/D |
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